Trilayer graphene nanoribbon carrier statistics in degenerate and non degenerate limits

Rahmani, M. and Ahmadi, M. T. and Webb, J. F. and Shayesteh, N. and Mousavi, S. M. and Sadeghi, Hatef and Ismail, Razi (2012) Trilayer graphene nanoribbon carrier statistics in degenerate and non degenerate limits. AIP Conference Proceedings, 1499. pp. 272-275. ISSN 0094-243X

Full text not available from this repository.

Abstract

We present trilayer graphene nanoribbon carrier statistics in the degenerate and the nondegenerate limits. Within zero to 3k(B)T from the conduction or valence band edgers high concentrations of carriers sensitively depend on a normalized Fermi energy which is independent of temperature. The effect of different stacking orders of graphene multilayers on the electric field induced band gap is studied. The gap for trilayer graphene with the ABC stacking is much larger than the corresponding gap for the ABA trilayer. The gap for the different types of stacking is much larger as compared to the case of Bernal stacking. A non- monotonic dependence of the true energy gap in trilayer graphene on the charge density is investigated along with the electronic low-energy band structure of ABC stacked multilayer graphene. The band structure of trilayer graphene systems in the presence of a perpendicular electric field is obtained using a tight-binding approach.

Item Type:
Journal Article
Journal or Publication Title:
AIP Conference Proceedings
Subjects:
ID Code:
72822
Deposited By:
Deposited On:
02 Feb 2015 13:50
Refereed?:
Yes
Published?:
Published
Last Modified:
01 Jan 2020 09:07