An analytical approach to calculate effective channel length in graphene nanoribbon field effect transistors

Ghadiry, M. and Nadi, M. and Bahadorian, M. and Manaf, Asrulnizam A. B. D. and Karimi, H. and Sadeghi, Hatef (2013) An analytical approach to calculate effective channel length in graphene nanoribbon field effect transistors. Microelectronics Reliability, 53 (4). pp. 540-543. ISSN 0026-2714

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Abstract

A compact analytical approach for calculation of effective channel length in graphene nanoribbon field effect transistor (GNRFET) is presented in this paper. The modelling is begun by applying Gauss's law and solving Poisson's equation. We include the effect of quantum capacitance and GNR's intrinsic carrier concentration in our model. Based on the model the effects of several parameters such as drain-source voltage, channel length, and oxide thickness are studied on the length of effective channel in GNRFETs.

Item Type:
Journal Article
Journal or Publication Title:
Microelectronics Reliability
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/3100/3104
Subjects:
ID Code:
72817
Deposited By:
Deposited On:
02 Feb 2015 14:28
Refereed?:
Yes
Published?:
Published
Last Modified:
01 Jan 2020 09:07