Electrical transport model of silicene as a channel of field effect transistor

Sadeghi, Hatef (2014) Electrical transport model of silicene as a channel of field effect transistor. Journal of Nanoscience and Nanotechnology, 14 (6). pp. 4178-4184. ISSN 1533-4880

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Abstract

The analytical electrical transport model of the Silicene, a single layer of sp(3) bonded silicon atoms in the honeycomb lattice structure as a channel in the field effect transistor configuration is presented in this paper. Although the carrier concentration of the Silicene shows similar behavior to Graphene, there are some differences in the conductance behavior. Presented model shows increment in the total carrier and the conductance with the gate voltage as expected for conventional semiconductors which affected by the temperature only in the neutrality point. The minimum conductance is increased by the temperature whereas it remains stable in the degenerate regime. Presented analytical model is in good agreement with the numerical conductance calculation based on the implementation of the non-equilibrium Green's function method coupled to the density functional theory.

Item Type:
Journal Article
Journal or Publication Title:
Journal of Nanoscience and Nanotechnology
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/3100/3104
Subjects:
ID Code:
72815
Deposited By:
Deposited On:
02 Feb 2015 10:25
Refereed?:
Yes
Published?:
Published
Last Modified:
22 Apr 2020 03:23