Silicon sensitisation using light harvesting layers

Fang, Liping and Alderman, Nicholas and Danos, Lefteris and Markvart, Tomas (2014) Silicon sensitisation using light harvesting layers. Materials Research Innovations, 18 (7). pp. 494-499. ISSN 1432-8917

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Abstract

Langmuir–Blodgett monolayers of a cyanine dye mixed with stearic acid were deposited on glass and silicon substrates with spacer layers of pure stearic acid monolayers or silicon dioxide films deposited by PECVD. By using the time correlated single photon counting technique, time resolved emission spectra (TRES) and decay curves were measured to characterise the dependence of energy transfer rate on the separation between the dye monolayer and the silicon surface and also on the dye concentrations in the monolayers. We observe interlayer energy transfer between monomers, dimers and higher aggregates present in the monolayer deposited on glass but also competing directly with energy transfer to silicon at close distances. We find that the fluorescence lifetime of the dye monolayer is significantly shortened when present close to the silicon surface signifying efficient energy transfer. The dissipation of the excitation energy near silicon is explained using the classical theory developed for metals and a deviation is observed for distances close to the silicon surface.

Item Type:
Journal Article
Journal or Publication Title:
Materials Research Innovations
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/3100/3104
Subjects:
ID Code:
72287
Deposited By:
Deposited On:
22 Dec 2014 09:49
Refereed?:
Yes
Published?:
Published
Last Modified:
01 Jan 2020 09:04