In(AsN) mid-infrared emission enhanced by rapid thermal annealing

Kesaria, Manoj and Birindelli, Simone and A.V. Velichko, A.V. and Zhuang, Qiandong and Patane, A. and Capizzi, Mario and Krier, Anthony (2015) In(AsN) mid-infrared emission enhanced by rapid thermal annealing. Infrared Physics and Technology, 68. pp. 138-142. ISSN 1350-4495

Full text not available from this repository.


We report a substantial increase in the quality and photoluminescence (PL) emission efficiency of In(AsN) dilute nitride alloys grown on both p-type InAs and semi-insulting GaAs substrates, in response to rapid thermal annealing. At 4 K the PL emission efficiency increases by 25 times due to a reduction in non-radiative Shockley-Read-Hall recombination originating from elimination of point defects. For annealing temperatures up to 500 °C the activation energy for thermal quenching increases by a factor of three, with no change in the residual electron concentration and mobility. Temperature dependent PL, together with X-ray diffraction measurements, reveals an improvement in compositional uniformity. Our results are significant for photonic device applications and particularly for the development of cryogenic mid-infrared photodiodes, monolithic detectors and focal plane arrays.

Item Type:
Journal Article
Journal or Publication Title:
Infrared Physics and Technology
Uncontrolled Keywords:
ID Code:
Deposited By:
Deposited On:
15 Dec 2014 09:59
Last Modified:
22 Nov 2022 01:24