High-mobility ZnO thin film transistors based on solution-processed hafnium oxide gate dielectrics

Bin Esro, Mazran and Vourlias, G. and Somerton, Christopher and Milne, William I. and Adamopoulos, George (2015) High-mobility ZnO thin film transistors based on solution-processed hafnium oxide gate dielectrics. Advanced Functional Materials, 25 (1). pp. 134-141. ISSN 1616-301X

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Abstract

The properties of metal oxides with high dielectric constant (k) are being extensively studied for use as gate dielectric alternatives to silicon dioxide (SiO2). Despite their attractive properties, these high-k dielectrics are usually manufactured using costly vacuum-based techniques. In that respect, recent research has been focused on the development of alternative deposition methods based on solution-processable metal oxides. Here, the application of the spray pyrolysis (SP) technique for processing high-quality hafnium oxide (HfO2) gate dielectrics and their implementation in thin film transistors employing spray-coated zinc oxide (ZnO) semiconducting channels are reported. The films are studied by means of admittance spectroscopy, atomic force microscopy, X-ray diffraction, UV–Visible absorption spectroscopy, FTIR, spectroscopic ellipsometry, and field-effect measurements. Analyses reveal polycrystalline HfO2 layers of monoclinic structure that exhibit wide band gap (≈5.7 eV), low roughness (≈0.8 nm), high dielectric constant (k ≈ 18.8), and high breakdown voltage (≈2.7 MV/cm). Thin film transistors based on HfO2/ZnO stacks exhibit excellent electron transport characteristics with low operating voltages (≈6 V), high on/off current modulation ratio (∼107) and electron mobility in excess of 40 cm2 V−1 s−1.

Item Type:
Journal Article
Journal or Publication Title:
Advanced Functional Materials
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/3100/3104
Subjects:
ID Code:
71708
Deposited By:
Deposited On:
11 Nov 2014 09:57
Refereed?:
Yes
Published?:
Published
Last Modified:
01 Jul 2020 01:53