Time dependent quantum simulations of two-qubit gates based on donor states in silicon

Kerridge, A. and Savory, S. and Harker, A. H. and Stoneham, A. M. (2006) Time dependent quantum simulations of two-qubit gates based on donor states in silicon. Journal of Physics: Condensed Matter, 18 (21). S767-S776. ISSN 0953-8984

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Abstract

Many quantum gate proposals make physical assumptions to ease analysis. Here we explicitly consider the effect of these assumptions for a particular two-qubit gate proposal, a cube-root-of-unity gate, in which the two qubits are donors in a semiconductor coupled via an intermediate 'control' spin. Our approach considers directly the electronic structures of the qubit and control impurity systems. We find that such gates are highly sensitive to environmental factors overlooked in analytically soluble models, but that there are regimes in which simplifying assumptions are valid and lead to high fidelity gates.

Item Type: Journal Article
Journal or Publication Title: Journal of Physics: Condensed Matter
Uncontrolled Keywords: /dk/atira/pure/subjectarea/asjc/3100/3104
Subjects:
ID Code: 71578
Deposited By: ep_importer_pure
Deposited On: 03 Nov 2014 10:26
Refereed?: Yes
Published?: Published
Last Modified: 01 Jan 2020 09:02
URI: https://eprints.lancs.ac.uk/id/eprint/71578

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