Self-catalysed InAs1− xSbx nanowires grown directly on bare Si substrates

Anyebe, Ezekiel and Zhuang, Qiandong (2014) Self-catalysed InAs1− xSbx nanowires grown directly on bare Si substrates. Materials Research Bulletin, 60. 572–575.

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Abstract

We report the self-catalysed growth of InAs1 − xSbx nanowires directly on bare Si substrates. Vertically aligned and non-tapered InAs1−xSbx nanowires were realized via indium-assisted nucleation without using nanowire stems. The compositions of the InAs1 − xSbx nanowires were determined by high resolution X-ray diffraction (HRXRD). It is observed that the geometry of the nanowires is modified by the Sb flux resulting in an almost doubling of the lateral dimension and a corresponding suppression in the axial growth of the InAs1 − xSbx nanowires. This observation unravels a method to modify the geometry of InAs nanowire and open up a promising route for the direct integration of InAs1 − xSbx nanowires with the well-established Si platform.

Item Type:
Journal Article
Journal or Publication Title:
Materials Research Bulletin
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/3100/3104
Subjects:
ID Code:
70986
Deposited By:
Deposited On:
26 Sep 2014 08:22
Refereed?:
Yes
Published?:
Published
Last Modified:
16 Nov 2020 05:46