Self-catalysed InAs1− xSbx nanowires grown directly on bare Si substrates

Anyebe, Ezekiel and Zhuang, Qiandong (2014) Self-catalysed InAs1− xSbx nanowires grown directly on bare Si substrates. Materials Research Bulletin, 60. 572–575.

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We report the self-catalysed growth of InAs1 − xSbx nanowires directly on bare Si substrates. Vertically aligned and non-tapered InAs1−xSbx nanowires were realized via indium-assisted nucleation without using nanowire stems. The compositions of the InAs1 − xSbx nanowires were determined by high resolution X-ray diffraction (HRXRD). It is observed that the geometry of the nanowires is modified by the Sb flux resulting in an almost doubling of the lateral dimension and a corresponding suppression in the axial growth of the InAs1 − xSbx nanowires. This observation unravels a method to modify the geometry of InAs nanowire and open up a promising route for the direct integration of InAs1 − xSbx nanowires with the well-established Si platform.

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Journal Article
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Materials Research Bulletin
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26 Sep 2014 08:22
Last Modified:
09 Feb 2022 03:49