High electron mobility thin-film transistors based on Ga2O3 grown by atmospheric ultrasonic spray pyrolysis at low temperatures

Thomas, Stuart R. and Adamopoulos, George and Lin, Yen-hung and Faber, Hendrik and Sygellou, Labrini and Stratakis, Emmanuel and Pliatsikas, Nikos and Patsalas, Panos A. and Anthopoulos, Thomas D. (2014) High electron mobility thin-film transistors based on Ga2O3 grown by atmospheric ultrasonic spray pyrolysis at low temperatures. Applied Physics Letters, 105 (9). ISSN 0003-6951

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Abstract

We report on thin-film transistors based on Ga2O3 films grown by ultrasonic spray pyrolysis in ambient atmosphere at 400–450 °C. The elemental, electronic, optical, morphological, structural, and electrical properties of the films and devices were investigated using a range of complementary characterisation techniques, whilst the effects of post deposition annealing at higher temperature (700 °C) were also investigated. Both as-grown and post-deposition annealed Ga2O3 films are found to be slightly oxygen deficient, exceptionally smooth and exhibit a wide energy bandgap of ∼4.9 eV. Transistors based on as-deposited Ga2O3 films show n-type conductivity with the maximum electron mobility of ∼2 cm2/V s.

Item Type:
Journal Article
Journal or Publication Title:
Applied Physics Letters
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/3100/3101
Subjects:
ID Code:
70705
Deposited By:
Deposited On:
11 Sep 2014 08:18
Refereed?:
Yes
Published?:
Published
Last Modified:
30 Sep 2020 06:01