Self-catalysed growth of InAs nanowires on bare Si substrates by droplet epitaxy

Anyebe, Ezekiel and Zhuang, Qiandong and Sanchez, A. M. and Lawson, Stuart and Robson, Alexander and Ponomarenko, L. A. and Zhukov, Alexander and Kolosov, Oleg (2014) Self-catalysed growth of InAs nanowires on bare Si substrates by droplet epitaxy. physica status solidi (RRL) - Rapid Research Letters, 8 (7). 658–662. ISSN 1862-6270

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Abstract

We demonstrate the self-catalyst growth of vertically aligned InAs nanowires on bare Si(111) by droplet epitaxy. The growth conditions of indium droplets suitable for nucleation and growth of nanowires have been identified. We have then realized vertically aligned and non-tapered InAs nanowires on bare Si(111) substrates through optimal indium droplets. It was found that the lateral dimensions and density of nano-wires are defined by the indium droplets. This technique unravels a controllable, cost-effective and time-efficient route to fabricating functional monolithic hybrid structures of InAs nanowires on silicon.

Item Type:
Journal Article
Journal or Publication Title:
physica status solidi (RRL) - Rapid Research Letters
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/3100/3104
Subjects:
ID Code:
69995
Deposited By:
Deposited On:
15 Jul 2014 07:52
Refereed?:
Yes
Published?:
Published
Last Modified:
05 Aug 2020 02:55