High-sensitivity photodetectors based on multilayer GaTe flakes

Liu, F. and Shimotani, H. and Shang, H. and Kanagasekaran, T. and Zolyomi, Viktor and Drummond, Neil and Falko, Vladimir and Tanigaki, K. (2014) High-sensitivity photodetectors based on multilayer GaTe flakes. ACS Nano, 8 (1). pp. 752-760. ISSN 1936-0851

Full text not available from this repository.


Optoelectronic devices based on layered materials such as graphene have resulted in significant interest due to their unique properties and potential technological applications. The electric and optoelectronic properties of nano GaTe flakes as layered materials are described in this article. The transistor fabricated from multilayer GaTe shows a p-type action with a hole mobility of about 0.2 cm^2 V^(-1) s^(-1). The gate transistor exhibits a high photoresponsivity of 104 A/W, which is greatly better than that of graphene, MoS_2, and other layered compounds. Meanwhile, the response speed of 6 ms is also very fast. Both the high photoresponsivity and the fast response time described in the present study strongly suggest that multilayer GaTe is a promising candidate for future optoelectronic and photosensitive device applications.

Item Type:
Journal Article
Journal or Publication Title:
ACS Nano
Uncontrolled Keywords:
ID Code:
Deposited By:
Deposited On:
25 Mar 2014 09:14
Last Modified:
22 Nov 2022 00:46