Enhanced band edge luminescence from stress and defect free GaN nanowall network morphology

Thakur, Varun and Kesaria, Manoj and Shivaprasad, S. M. (2013) Enhanced band edge luminescence from stress and defect free GaN nanowall network morphology. Solid State Communications, 171. pp. 8-13. ISSN 0038-1098

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Abstract

We report on very high brightness of high quality, dislocation free GaN nanowall network. The GaN nanowall network sample was grown by plasma assisted molecular beam epitaxy and the optical properties were investigated by photoluminescence (PL) and absorption spectroscopy. Other nanostructures and flat structures were grown for comparison and a standard epilayer was used as a reference sample. The PL intensity of the nanowall network structure was observed to be a hundred times more than nanostructures consisting of tubes, as well as flat films. To explain the broadness and the peak position values, strain was calculated by X-ray diffraction studies and a band diagram was proposed to elucidate the structure of these films using PL, absorption and XPS valence band values.

Item Type:
Journal Article
Journal or Publication Title:
Solid State Communications
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/3100/3104
Subjects:
ID Code:
68631
Deposited By:
Deposited On:
18 Feb 2014 09:49
Refereed?:
Yes
Published?:
Published
Last Modified:
29 Jul 2020 11:14