Nanosecond switching in GeSe phase change memory films by atomic force microscopy

Bosse, Jim and Grishin, Ilja and Choi, Yong Gyu and Cheong, Byung-ki and Lee, Suyoun and Kolosov, Oleg and Huey, Bryan D. (2014) Nanosecond switching in GeSe phase change memory films by atomic force microscopy. Applied Physics Letters, 104 (5). ISSN 0003-6951

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Abstract

Nanosecond scale threshold switching is investigated with conducting atomic force microscopy (AFM) for an amorphous GeSe film. Switched bits exhibit 2–3 orders of magnitude variations in conductivity, as demonstrated in phase change based memory devices. Through the nm-scale AFM probe, this crystallization was achieved with pulse durations of as low as 15 ns, the fastest reported with scanning probe based methods. Conductance AFM imaging of the switched bits further reveals correlations between the switched volume, pulse amplitude, and pulse duration. The influence of film heterogeneities on switching is also directly detected, which is of tremendous importance for optimal device performance.

Item Type:
Journal Article
Journal or Publication Title:
Applied Physics Letters
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/3100/3101
Subjects:
ID Code:
68517
Deposited By:
Deposited On:
07 Feb 2014 09:44
Refereed?:
Yes
Published?:
Published
Last Modified:
13 May 2020 02:20