Electron spin coherence and electron nuclear double resonance of Bi donors in natural Si

George, Richard and Witzel, Wayne and Riemann, H. and Abrosimov, N. V. and Nötzel, N. and Thewalt, Mike and Morton, John (2010) Electron spin coherence and electron nuclear double resonance of Bi donors in natural Si. Physical review letters, 105 (6). ISSN 1079-7114

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Abstract

Donors in silicon hold considerable promise for emerging quantum technologies, due to their uniquely long electron spin coherence times. Bismuth donors in silicon differ from more widely studied group V donors, such as phosphorous, in several significant respects: They have the strongest binding energy (70.98 meV), a large nuclear spin (I=9/2), and a strong hyperfine coupling constant (A=1475.4  MHz). These larger energy scales allow us to perform a detailed test of theoretical models describing the spectral diffusion mechanism that is known to govern the electron spin decoherence of P donors in natural silicon. We report the electron-nuclear double resonance spectra of the Bi donor, across the range 200 MHz to 1.4 GHz, and confirm that coherence transfer is possible between electron and nuclear spin degrees of freedom at these higher frequencies.

Item Type:
Journal Article
Journal or Publication Title:
Physical review letters
Additional Information:
© 2010 The American Physical Society
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/3100
Subjects:
ID Code:
67339
Deposited By:
Deposited On:
30 Oct 2013 15:18
Refereed?:
Yes
Published?:
Published
Last Modified:
27 Sep 2020 01:57