Field-effect tunneling transistor based on vertical graphene heterostructures

Britnell, L. and Gorbachev, R. V. and Jalil, R. and Belle, B. D. and Schedin, F. and Mishchenko, A. and Georgiou, T. and Katsnelson, M. I. and Eaves, L. and Morozov, S. V. and Peres, N. M. R. and Leist, J. and Geim, A. K. and Novoselov, K. S. and Ponomarenko, L. A. (2012) Field-effect tunneling transistor based on vertical graphene heterostructures. Science, 335 (6071). pp. 947-950. ISSN 0036-8075

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Abstract

An obstacle to the use of graphene as an alternative to silicon electronics has been the absence of an energy gap between its conduction and valence bands, which makes it difficult to achieve low power dissipation in the OFF state. We report a bipolar field-effect transistor that exploits the low density of states in graphene and its one-atomic-layer thickness. Our prototype devices are graphene heterostructures with atomically thin boron nitride or molybdenum disulfide acting as a vertical transport barrier. They exhibit room-temperature switching ratios of ≈50 and ≈10,000, respectively. Such devices have potential for high-frequency operation and large-scale integration.

Item Type:
Journal Article
Journal or Publication Title:
Science
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/1000
Subjects:
ID Code:
66739
Deposited By:
Deposited On:
26 Sep 2013 08:52
Refereed?:
Yes
Published?:
Published
Last Modified:
30 May 2020 02:59