Kim, Y. and Poumirol, J. M. and Lombardo, A. and Kalugin, N. G. and Georgiou, T. and Kim, Y. J. and Novoselov, K. S. and Ferrari, A. C. and Kono, J. and Kashuba, O. and Falko, Vladimir and Smirnov, D. (2013) Measurement of Filling-Factor-Dependent Magnetophonon Resonances in Graphene Using Raman Spectroscopy. Physical review letters, 110 (22): 227402. ISSN 0031-9007
Full text not available from this repository.Abstract
We perform polarization-resolved Raman spectroscopy on graphene in magnetic fields up to 45 T. This reveals a filling-factor-dependent, multicomponent anticrossing structure of the Raman G peak, resulting from magnetophonon resonances between magnetoexcitons and E-2g phonons. This is explained with a model of Raman scattering taking into account the effects of spatially inhomogeneous carrier densities and strain. Random fluctuations of strain-induced pseudomagnetic fields lead to increased scattering intensity inside the anticrossing gap, consistent with the experiments.