Rapid thermal annealing and photoluminescence of type-II GaSb single monolayer quantum dot stacks

Mahajumi, Abu Syed and Carrington, Peter and Kostakis, Ioannis and Missous, Mohammed and Sanchez, Ana and Zhuang, Qiandong and Young, Robert and Hayne, Manus and Krier, Anthony (2013) Rapid thermal annealing and photoluminescence of type-II GaSb single monolayer quantum dot stacks. Journal of Physics D: Applied Physics, 46 (30). ISSN 0022-3727

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Abstract

The effects of rapid thermal annealing on the photoluminescence emission obtained from ten-layer stacks of GaSb/GaAs type-II single monolayer quantum dots and Stranski-Krastanow grown quantum rings have been studied and interpreted. Post-growth rapid thermal annealing was performed with proximity capping at temperatures from 550 degrees C to 800 degrees C, resulting in an increase in photoluminescence emission intensity and a blue shift in peak energy in both types of stacks, together with changes in the activation energy for thermal quenching. This behaviour originates from Sb-As intermixing and changes in morphology of the nanostructures formed using the two different growth mechanisms.

Item Type:
Journal Article
Journal or Publication Title:
Journal of Physics D: Applied Physics
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/3100/3104
Subjects:
ID Code:
66113
Deposited By:
Deposited On:
20 Aug 2013 10:25
Refereed?:
Yes
Published?:
Published
Last Modified:
25 Feb 2020 07:11