Semiconductor-based THz plasmonic metamaterial

Letizia, Rosa (2013) Semiconductor-based THz plasmonic metamaterial. In: Millimeter Waves and THz Technology Workshop (UCMMT), 2013 6th UK, Europe, China :. IEEE, GBR.

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Abstract

A new metamaterial (MTM) for THz range applications is proposed. The unit cell consists of indium antimonide (InSb) and silicon (Si) single-layered fishnet MTM. The InSb-based MTM shows enhanced resonance in the THz band and can be efficiently tuned by changing doping level of the semiconductor

Item Type:

Contribution in Book/Report/Proceedings

Subjects:

?? terahertz semiconductorplasmonicsmetamaterials ??

Departments:

Faculty of Science and Technology > Engineering

ID Code:

65598

Deposited By:

ep_importer_pure

Deposited On:

08 Jul 2013 11:55