Semiconductor-based THz plasmonic metamaterial

Letizia, Rosa (2013) Semiconductor-based THz plasmonic metamaterial. In: Millimeter Waves and THz Technology Workshop (UCMMT), 2013 6th UK, Europe, China. IEEE, GBR.

Full text not available from this repository.

Abstract

A new metamaterial (MTM) for THz range applications is proposed. The unit cell consists of indium antimonide (InSb) and silicon (Si) single-layered fishnet MTM. The InSb-based MTM shows enhanced resonance in the THz band and can be efficiently tuned by changing doping level of the semiconductor

Item Type:
Contribution in Book/Report/Proceedings
Subjects:
ID Code:
65598
Deposited By:
Deposited On:
08 Jul 2013 11:55
Refereed?:
Yes
Published?:
Published
Last Modified:
01 Jan 2020 05:45