Letizia, Rosa (2013) Semiconductor-based THz plasmonic metamaterial. In: Millimeter Waves and THz Technology Workshop (UCMMT), 2013 6th UK, Europe, China. IEEE, GBR.
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Official URL: https://doi.org/10.1109/UCMMT.2013.6641545
Abstract
A new metamaterial (MTM) for THz range applications is proposed. The unit cell consists of indium antimonide (InSb) and silicon (Si) single-layered fishnet MTM. The InSb-based MTM shows enhanced resonance in the THz band and can be efficiently tuned by changing doping level of the semiconductor
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Contribution in Book/Report/Proceedings
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ID Code:
65598
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Deposited On:
08 Jul 2013 11:55
Refereed?:
Yes
Published?:
Published
Last Modified:
21 Nov 2022 15:24