Optical investigation of the natural electron doping in thin MoS2 films deposited on dielectric substrates

Sercombe, D. and Schwarz, S. and Del Pozo-Zamudio, O. and Liu, F. and J. Robinson, B. and A. Chekhovich, E. and I. Tartakovskii, I. and Kolosov, O. and I. Tartakovskii, A. (2013) Optical investigation of the natural electron doping in thin MoS2 films deposited on dielectric substrates. Scientific Reports, 3: 03489.

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Abstract

We use micro-photoluminescence (PL) and ultrasonic force microscopy to explore the effects of dielectric substrate and capping on optical properties of a few mono-layer MoS2 films. PL lineshapes and peak energies for uncapped films are found to vary widely. This non-uniformity is dramatically suppressed by capping with SiO2 and SiN, improving mechanical coupling of MoS2 with the surrounding dielectrics. Capping also leads to pronounced charging of the films, evidenced from the dominating negative trion peak in PL.

Item Type:

Journal Article

Journal or Publication Title:

Scientific Reports

Additional Information:

This work is licensed under a Creative Commons Attribution 3.0 Unported License. To view a copy of this license, visit http://creativecommons.org/licenses/by/3.0/ 17 pages, 5 figures

Uncontrolled Keywords:

/dk/atira/pure/subjectarea/asjc/1000

Subjects:

?? cond-mat.mtrl-scigeneral ??

Departments:

Faculty of Science and Technology > Physics

ID Code:

64884

Deposited By:

ep_importer_pure

Deposited On:

04 Jun 2013 08:53

Refereed?:

Yes

Published?:

Published

Last Modified:

19 Nov 2024 01:38

URI:

https://eprints.lancs.ac.uk/id/eprint/64884