Optical investigation of the natural electron doping in thin MoS2 films deposited on dielectric substrates

Sercombe, D. and Schwarz, S. and Del Pozo-Zamudio, O. and Liu, F. and J. Robinson, B. and A. Chekhovich, E. and I. Tartakovskii, I. and Kolosov, O. and I. Tartakovskii, A. (2013) Optical investigation of the natural electron doping in thin MoS2 films deposited on dielectric substrates. Scientific Reports, 3.

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Abstract

We use micro-photoluminescence (PL) and ultrasonic force microscopy to explore the effects of dielectric substrate and capping on optical properties of a few mono-layer MoS2 films. PL lineshapes and peak energies for uncapped films are found to vary widely. This non-uniformity is dramatically suppressed by capping with SiO2 and SiN, improving mechanical coupling of MoS2 with the surrounding dielectrics. Capping also leads to pronounced charging of the films, evidenced from the dominating negative trion peak in PL.

Item Type:
Journal Article
Journal or Publication Title:
Scientific Reports
Additional Information:
This work is licensed under a Creative Commons Attribution 3.0 Unported License. To view a copy of this license, visit http://creativecommons.org/licenses/by/3.0/ 17 pages, 5 figures
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/1000
Subjects:
ID Code:
64884
Deposited By:
Deposited On:
04 Jun 2013 08:53
Refereed?:
Yes
Published?:
Published
Last Modified:
09 Jul 2020 03:00