p-channel thin-film transistors based on spray-coated Cu2O films

Pattanasattayavong, Pichaya and Thomas, Stuart and Adamopoulos, George and McLachlan, Martyn A. and Anthopoulos, Thomas D. (2013) p-channel thin-film transistors based on spray-coated Cu2O films. Applied Physics Letters, 102 (16). ISSN 0003-6951

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Thin films of cuprous oxide (Cu2O) were grown using solution-based spray pyrolysis in ambient air and incorporated into hole-transporting thin-film transistors. The phase of the oxide was confirmed by X-ray diffraction measurements while the optical band gap of the films was determined to be ∼2.57 eV from optical transmission measurements. Electrical characterization of Cu2O films was performed using bottom-gate, bottom-contact transistors based on SiO2 gate dielectric and gold source-drain electrodes. As-prepared devices show clear p-channel operation with field-effect hole mobilities in the range of 10−4–10−3 cm2 V−1 s−1 with some devices exhibiting values close to 1 × 10−2 cm2 V−1 s−1.

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Applied Physics Letters
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24 May 2013 08:17
Last Modified:
01 May 2022 06:58