Interface properties of Pb/InAs planar structures for Andreev spectroscopy

Magnus, F. and Yates, K. A. and Clowes, S. K. and Miyoshi, Y. and Bugoslavsky, Y. and Cohen, L. F. and Aziz, A. and Burnell, G. and Blamire, M. G. and Josephs-Franks, P. W. (2008) Interface properties of Pb/InAs planar structures for Andreev spectroscopy. Applied Physics Letters, 92 (1). ISSN 0003-6951

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Abstract

For Andreev spectroscopy to be a useful tool to detect spin accumulation in semiconductors, we show by simulation that there is a maximum value for the interface scattering parameter that can be tolerated. Three different fabrication routes for Pb/InAs planar junctions are explored and we find that the "etch-back" processing strategy is the most promising. Using the parameters extracted from the spectroscopic analysis, we find that the interface properties fall into four different regimes of behavior. (C) 2008 American Institute of Physics.

Item Type:
Journal Article
Journal or Publication Title:
Applied Physics Letters
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/3100/3101
Subjects:
ID Code:
63545
Deposited By:
Deposited On:
19 Apr 2013 10:35
Refereed?:
Yes
Published?:
Published
Last Modified:
11 Jun 2020 02:40