Silicon depletion layer actuators

Ransley, J. H. T. and Aziz, A. and Durkan, C. and Seshia, A. A. (2008) Silicon depletion layer actuators. Applied Physics Letters, 92 (18). ISSN 0003-6951

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Abstract

The uncompensated donor or acceptor atoms present within the depletion layer of a diode can be employed in an electrostatic actuator, which utilizes the force between opposing. charges on either side of the semiconductor junction. We describe the theory of this actuator and demonstrate its application for the case of a diode on the top surface of a silicon cantilever. The Schottky diodes fabricated on the top surface of cantilevers were used to drive them into resonance. As the actuator driving voltages are varied, the amplitude of vibration of the cantilevers changes, which is in agreement with the theoretical predictions. (C) 2008 American Institute of Physics.

Item Type:
Journal Article
Journal or Publication Title:
Applied Physics Letters
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/3100/3101
Subjects:
ID Code:
63539
Deposited By:
Deposited On:
19 Apr 2013 10:23
Refereed?:
Yes
Published?:
Published
Last Modified:
25 Oct 2020 09:07