Spin transfer switching and low-field precession in exchange-biased spin valve nanopillars

Wu, M. C. and Aziz, A. and Morecroft, D. and Blamire, M. G. and Hickey, M. C. and Ali, M. and Burnell, G. and Hickey, B. J. (2008) Spin transfer switching and low-field precession in exchange-biased spin valve nanopillars. Applied Physics Letters, 92 (14). ISSN 0003-6951

Full text not available from this repository.

Abstract

Using a three-dimensional focused ion beam lithography process, we have fabricated nanopillar devices that show spin transfer torque switching at zero external magnetic fields. Under a small in-plane external bias field, a field-dependent peak in the differential resistance versus current is observed similar to that reported in asymmetrical nanopillar devices. This is interpreted as evidence for the low-field excitation of spin waves, which in our case is attributed to a spin-scattering asymmetry enhanced by the IrMn exchange bias layer coupled to a relatively thin CoFe fixed layer. (c) 2008 American Institute of Physics.

Item Type:
Journal Article
Journal or Publication Title:
Applied Physics Letters
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/3100/3101
Subjects:
ID Code:
63536
Deposited By:
Deposited On:
19 Apr 2013 10:24
Refereed?:
Yes
Published?:
Published
Last Modified:
11 Mar 2020 03:50