High-accuracy analysis of nanoscale semiconductor layers using beam-exit Ar-ion polishing and scanning probe microscopy

Robson, Alex and Grishin, Ilja and Young, Robert and Sanchez, A. M. and Kolosov, Oleg and Hayne, Manus (2013) High-accuracy analysis of nanoscale semiconductor layers using beam-exit Ar-ion polishing and scanning probe microscopy. ACS Applied Materials and Interfaces, 5 (8). pp. 3241-3245. ISSN 1944-8244

[img]
Preview
PDF (Post print Robson Appl Mater Interfaces 5 3241 (2013))
Post_print_Robson_Appl_Mater_Interfaces_5_3241_2013_.pdf - Accepted Version

Download (699kB)

Abstract

A novel method of sample cross-sectioning, beam-exit Ar-ion cross-sectional polishing, has been combined with scanning probe microscopy to study thin AlxGa1-xAs/GaAs layers. Additional contrast enhancement via a citric acid/hydrogen peroxide etch allows us to report the observation of layers as thin as 1 nm. Layer thickness measurements agree with transmission electron microscopy (TEM) data to 0.1 ± 0.2 nm, making this a very promising low-cost method for nanoscale analysis of semiconductor heterostructures.

Item Type:
Journal Article
Journal or Publication Title:
ACS Applied Materials and Interfaces
Additional Information:
“This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials and Interfaces, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://pubs.acs.org/doi/abs/10.1021/am400270w
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/2500
Subjects:
ID Code:
63292
Deposited By:
Deposited On:
08 Apr 2013 15:30
Refereed?:
Yes
Published?:
Published
Last Modified:
30 Oct 2020 01:59