Robson, Alex and Grishin, Ilja and Young, Robert and Sanchez, A. M. and Kolosov, Oleg and Hayne, Manus (2013) High-accuracy analysis of nanoscale semiconductor layers using beam-exit Ar-ion polishing and scanning probe microscopy. ACS Applied Materials and Interfaces, 5 (8). pp. 3241-3245. ISSN 1944-8244
Post_print_Robson_Appl_Mater_Interfaces_5_3241_2013_.pdf - Accepted Version
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Abstract
A novel method of sample cross-sectioning, beam-exit Ar-ion cross-sectional polishing, has been combined with scanning probe microscopy to study thin AlxGa1-xAs/GaAs layers. Additional contrast enhancement via a citric acid/hydrogen peroxide etch allows us to report the observation of layers as thin as 1 nm. Layer thickness measurements agree with transmission electron microscopy (TEM) data to 0.1 ± 0.2 nm, making this a very promising low-cost method for nanoscale analysis of semiconductor heterostructures.