Linear magnetoresistance due to multi-electron scattering by low-mobility islands in an inhomogeneous conductor

Kozlova, N. V. and Mori, N. and Makarovsky, O. and Eaves, L. and Zhuang, Qiandong and Krier, Anthony and Patane, A. (2012) Linear magnetoresistance due to multi-electron scattering by low-mobility islands in an inhomogeneous conductor. Nature Communications, 3.

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Abstract

Linear transverse magnetoresistance is commonly observed in many material systems including semimetals, narrow band-gap semiconductors, multi-layer graphene and topological insulators. It can originate in an inhomogeneous conductor from distortions in the current paths induced by macroscopic spatial fluctuations in the carrier mobility and it has been explained using a phenomenological semiclassical random resistor network model. However, the link between the linear magnetoresistance and the microscopic nature of the electron dynamics remains unknown. Here we demonstrate how the linear magnetoresistance arises from the stochastic behaviour of the electronic cycloidal trajectories around low-mobility islands in high-mobility inhomogeneous conductors and that this process is only weakly affected by the applied electric field strength. Also, we establish a quantitative link between the island morphology and the strength of linear magnetoresistance of relevance for future applications.

Item Type:
Journal Article
Journal or Publication Title:
Nature Communications
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/3100
Subjects:
ID Code:
62967
Deposited By:
Deposited On:
18 Mar 2013 16:41
Refereed?:
Yes
Published?:
Published
Last Modified:
13 May 2020 02:04