Development of dilute nitride materials for mid-infrared diode lasers

Krier, A. and de la Mare, M. and Carrington, P. J. and Thompson, M. and Zhuang, Q. and Patane, A. and Kudrawiec, R. (2012) Development of dilute nitride materials for mid-infrared diode lasers. Semiconductor Science and Technology, 27 (9). ISSN 0268-1242

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Abstract

The development of dilute nitride alloys for use in mid-infrared diode lasers operating in the 3-4 mu m spectral range is described. The dilute nitrides are found to offer improved temperature stability of the photon emission. This arises from localization effects and reduced non-radiative Auger recombination.

Item Type:
Journal Article
Journal or Publication Title:
Semiconductor Science and Technology
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/3100/3104
Subjects:
ID Code:
62324
Deposited By:
Deposited On:
13 Feb 2013 15:55
Refereed?:
Yes
Published?:
Published
Last Modified:
06 May 2020 02:37