Single electron transport in a free-standing quantum dot

Chorley, S. J. and Smith, C. G. and Perez-Martinez, F. and Prance, J. and Atkinson, P. and Ritchie, D. A. and Jones, G. A. C. (2008) Single electron transport in a free-standing quantum dot. Microelectronics Journal, 39 (3-4). pp. 314-317. ISSN 0026-2692

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Abstract

We have fabricated a single quantum dot in the two-dimensional electron gas of a free-standing GaAs/AlGaAs heterostructure. Standard processing techniques are used to define the dot on a narrow mesa and selective etching undercuts the device to form a 120 nm thick free-standing beam connected to the substrate by source and drain regions. Work by Weig et al. [Phys. Rev. Lett. 92(4) (2004) 046804] on similar devices has provided evidence for phonon blockade which suppresses conduction at low temperatures and bias. Further studies are presented here that can only partially be explained by this theory. A similar gap in conductance has been seen, but evolution of the structure in a magnetic field suggests an alternative explanation of multiple dots in series, may better explain the results. (

Item Type:
Journal Article
Journal or Publication Title:
Microelectronics Journal
Uncontrolled Keywords:
/dk/atira/pure/researchoutput/libraryofcongress/qc
Subjects:
ID Code:
59556
Deposited By:
Deposited On:
26 Oct 2012 15:13
Refereed?:
Yes
Published?:
Published
Last Modified:
01 Jan 2020 08:11