Fast Hybrid Silicon Double-Quantum-Dot Qubit

Shi, Zhan and Simmons, C. B. and Prance, J. R. and Gamble, John King and Koh, Teck Seng and Shim, Yun-Pil and Hu, Xuedong and Savage, D. E. and Lagally, M. G. and Eriksson, M. A. and Friesen, Mark and Coppersmith, S. N. (2012) Fast Hybrid Silicon Double-Quantum-Dot Qubit. Physical review letters, 108 (14). -. ISSN 0031-9007

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We propose a quantum dot qubit architecture that has an attractive combination of speed and fabrication simplicity. It consists of a double quantum dot with one electron in one dot and two electrons in the other. The qubit itself is a set of two states with total spin quantum numbers S-2 = 3/4 (S = 1/2) and S-z = -1/2, with the two different states being singlet and triplet in the doubly occupied dot. Gate operations can be implemented electrically and the qubit is highly tunable, enabling fast implementation of one-and two-qubit gates in a simpler geometry and with fewer operations than in other proposed quantum dot qubit architectures with fast operations. Moreover, the system has potentially long decoherence times. These are all extremely attractive properties for use in quantum information processing devices.

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Journal Article
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Physical review letters
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26 Oct 2012 13:47
Last Modified:
15 Sep 2023 00:05