Effect of disorder on a graphene p-n junction

Fogler, M. M. and Novikov, Dmitri S and Glazman, Leonid and Shklovskii, Boris (2008) Effect of disorder on a graphene p-n junction. Physical review B, 77 (7). ISSN 1098-0121

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Abstract

We propose the theory of transport in a gate-tunable graphene p-n junction, in which the gradient of the carrier density is controlled by the gate voltage. Depending on this gradient and on the density of charged impurities, the junction resistance is dominated by either diffusive or ballistic contribution. We find the conditions for observing ballistic transport and show that in existing devices they are satisfied only marginally. We also simulate numerically the trajectories of charge carriers and illustrate challenges in realizing more delicate ballistic effects, such as Veselago lensing.

Item Type:
Journal Article
Journal or Publication Title:
Physical review B
Additional Information:
© 2008 The American Physical Society
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/aacsb/disciplinebasedresearch
Subjects:
ID Code:
58536
Deposited By:
Deposited On:
19 Sep 2012 09:24
Refereed?:
Yes
Published?:
Published
Last Modified:
14 Jul 2020 03:17