Suppression of thermal broadening via Zener tunneling in narrow-gap semiconductor double-quantum-wire structures

Kyriakou, Ioanna and Jefferson, John H. and Lambert, Colin J. (2010) Suppression of thermal broadening via Zener tunneling in narrow-gap semiconductor double-quantum-wire structures. Applied Physics Letters, 96 (23). -. ISSN 0003-6951

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Abstract

Zener interband tunneling through a potential profile induced by two top gates in the plane of the two-dimensional electron gas (2DEG) of a doped narrow-gap quantum well system is studied when the gates are biased differently. In contrast to the case of resonant transport through a potential profile created by a single gate these resonances exhibit only a weak dependence on temperature. We present results for a system based on an InSb quantum well and show that narrow resonances are maintained up to room temperature. Such narrow resonances may be exploited for voltage sensing at elevated temperatures. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3436725]

Item Type: Journal Article
Journal or Publication Title: Applied Physics Letters
Uncontrolled Keywords: /dk/atira/pure/researchoutput/libraryofcongress/qc
Subjects:
Departments: Faculty of Science and Technology > Physics
ID Code: 57870
Deposited By: ep_importer_pure
Deposited On: 28 Aug 2012 14:00
Refereed?: Yes
Published?: Published
Last Modified: 01 Jan 2020 08:06
URI: https://eprints.lancs.ac.uk/id/eprint/57870

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