Environment-Assisted Tunneling as an Origin of the Dynes Density of States

Pekola, J. P. and Maisi, V. F. and Kafanov, S. and Chekurov, N. and Kemppinen, A. and Pashkin, Yuri and Saira, O. -P. and Mottonen, M. and Tsai, J. S. (2010) Environment-Assisted Tunneling as an Origin of the Dynes Density of States. Physical review letters, 105 (2). -. ISSN 0031-9007

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Abstract

We show that the effect of a high-temperature environment in current transport through a normal metal-insulator-superconductor tunnel junction can be described by an effective density of states in the superconductor. In the limit of a resistive low-Ohmic environment, this density of states reduces into the well-known Dynes form. Our theoretical result is supported by experiments in engineered environments. We apply our findings to improve the performance of a single-electron turnstile, a potential candidate for a metrological current source.

Item Type:
Journal Article
Journal or Publication Title:
Physical review letters
Uncontrolled Keywords:
/dk/atira/pure/researchoutput/libraryofcongress/qc
Subjects:
ID Code:
57812
Deposited By:
Deposited On:
28 Aug 2012 10:30
Refereed?:
Yes
Published?:
Published
Last Modified:
24 Nov 2020 02:06