Detection of mechanical resonance of a single-electron transistor by direct current

Pashkin, Yuri and Li, T. F. and Pekola, J. P. and Astafiev, O. and Knyazev, D. A. and Hoehne, F. and Im, H. and Nakamura, Y. and Tsai, J. S. (2010) Detection of mechanical resonance of a single-electron transistor by direct current. Applied Physics Letters, 96 (26). -. ISSN 0003-6951

Full text not available from this repository.

Abstract

We have suspended an Al based single-electron transistor (SET) whose island can resonate freely between the source and drain leads forming the clamps. In addition to the regular side gate, a bottom gate with a larger capacitance to the SET island is placed underneath to increase the SET coupling to mechanical motion. The device can be considered as a doubly clamped Al beam that can transduce mechanical vibrations into variations in the SET current. Our simulations based on the orthodox model, with the SET parameters estimated from the experiment, reproduce the observed transport characteristics in detail.

Item Type:
Journal Article
Journal or Publication Title:
Applied Physics Letters
Uncontrolled Keywords:
/dk/atira/pure/researchoutput/libraryofcongress/qc
Subjects:
ID Code:
57811
Deposited By:
Deposited On:
28 Aug 2012 14:05
Refereed?:
Yes
Published?:
Published
Last Modified:
18 Nov 2020 11:54