Fabrication and characterization of Al nanomechanical resonators for coupling to nanoelectronic devices

Harrabi, K. and Pashkin, Y. A. and Astafiev, O. V. and Kafanov, S. and Li, T. F. and Tsai, J. S. (2012) Fabrication and characterization of Al nanomechanical resonators for coupling to nanoelectronic devices. Applied Physics A, 108 (1). pp. 7-11. ISSN 0947-8396

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Abstract

We report on a suspension technique for Al doubly clamped beams. The technique is based on two consecutive reactive ion etching processes in CF4 plasma, anisotropic and isotropic, of SiO (x) on which Al layer is deposited. With this technique, Al doubly clamped beams were fabricated. One of the beams was characterized using a magnetomotive measurement scheme at low temperatures. The developed suspension technique is suitable for the fabrication of Al nanoelectronic devices with a mechanical degree of freedom, in particular, superconducting flux qubits with partly suspended loops.

Item Type:
Journal Article
Journal or Publication Title:
Applied Physics A
Uncontrolled Keywords:
/dk/atira/pure/researchoutput/libraryofcongress/qc
Subjects:
ID Code:
57805
Deposited By:
Deposited On:
28 Aug 2012 12:48
Refereed?:
Yes
Published?:
Published
Last Modified:
13 May 2020 01:55