Air-Stable Solution-Processed Hybrid Transistors with Hole and Electron Mobilities Exceeding 2 cm(2) V-1 s(-1)

Smith, Jeremy and Bashir, Aneeqa and Adamopoulos, George and Anthony, John E. and Bradley, Donal D. C. and Hamilton, R. and Heeney, Martin and McCulloch, Iain and Anthopoulos, Thomas D. (2010) Air-Stable Solution-Processed Hybrid Transistors with Hole and Electron Mobilities Exceeding 2 cm(2) V-1 s(-1). Advanced Materials, 22 (32). pp. 3598-3602. ISSN 0935-9648

Abstract

An alternative approach for the development of high-performance unipolar and ambipolar thin-film transistors and integrated circuits based on hybrid heterostructures comprising a phase-separated solution processed p-type organic small-molecule:polymer semicondcutor blend and a spray-coated n-type ZnO semiconductor layer is demonstrated.