Air-Stable Solution-Processed Hybrid Transistors with Hole and Electron Mobilities Exceeding 2 cm(2) V-1 s(-1)

Smith, Jeremy and Bashir, Aneeqa and Adamopoulos, George and Anthony, John E. and Bradley, Donal D. C. and Hamilton, R. and Heeney, Martin and McCulloch, Iain and Anthopoulos, Thomas D. (2010) Air-Stable Solution-Processed Hybrid Transistors with Hole and Electron Mobilities Exceeding 2 cm(2) V-1 s(-1). Advanced Materials, 22 (32). pp. 3598-3602. ISSN 0935-9648

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Abstract

An alternative approach for the development of high-performance unipolar and ambipolar thin-film transistors and integrated circuits based on hybrid heterostructures comprising a phase-separated solution processed p-type organic small-molecule:polymer semicondcutor blend and a spray-coated n-type ZnO semiconductor layer is demonstrated.

Item Type:
Journal Article
Journal or Publication Title:
Advanced Materials
Uncontrolled Keywords:
/dk/atira/pure/researchoutput/libraryofcongress/ta
Subjects:
ID Code:
57654
Deposited By:
Deposited On:
20 Aug 2012 08:03
Refereed?:
Yes
Published?:
Published
Last Modified:
01 Jul 2020 09:51