Effective g(*) factor of two-dimensional electrons in GaN/AlGaN heterojunctions

Knap, W. and Frayssinet, E. and Sadowski, M. L. and Skierbiszewski, C. and Maude, D. and Falko, Vladimir and Khan, M. Asif and Shur, M. S. (1999) Effective g(*) factor of two-dimensional electrons in GaN/AlGaN heterojunctions. Applied Physics Letters, 75 (20). pp. 3156-3158. ISSN 0003-6951

Full text not available from this repository.

Abstract

The conduction band parameters of two-dimensional (2D) electrons in high density GaN/AlGaN heterojunctions were studied using the cyclotron resonance and magnetotransport techniques in high magnetic fields (24 T) and low temperatures (300 mK). The Landau level splitting determined from the cyclotron resonance experiment yielded the effective mass of 2D carriers, m* = 0.242 +/- 0.002 m(0). The Lande g factor for the 2D electrons (g = 2.06 +/- 0.04) was determined from the angular dependence of the amplitude of Shubnikov-de-Haas oscillations experiments in tilted magnetic field. (C) 1999 American Institute of Physics. [S0003-6951(99)00845-1].

Item Type:
Journal Article
Journal or Publication Title:
Applied Physics Letters
Uncontrolled Keywords:
/dk/atira/pure/researchoutput/libraryofcongress/qc
Subjects:
ID Code:
57117
Deposited By:
Deposited On:
05 Sep 2012 17:17
Refereed?:
Yes
Published?:
Published
Last Modified:
15 Jul 2020 03:34