On resonant oscillations in current-voltage characteristics of double-barrier heterostructures

Falko, Vladimir and Meshkov, S. V. (1991) On resonant oscillations in current-voltage characteristics of double-barrier heterostructures. Semiconductor Science and Technology, 6 (3). pp. 196-200. ISSN 0268-1242

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A non-quantum interference mechanism in the current-voltage characteristics of double-barrier semiconductor heterostructures is suggested. It is based on the admixing of independent contributions of channels corresponding to different values of the electron momentum along the plane of device. The disturbing of coherence of channels due to non-parabolicity of the conduction band and magnetic field parallel to the plane causes a modulation of amplitude of resonant oscillations (looking like beats) in devices with wide interbarrier space. In the simplest cases the amplitude of oscillations depends on the voltage drop V and magnetic field H as sin(V3/2)/V3/2 and J1(H)/H respectively. Our consideration gives an interpretation of the experiments in a parallel magnetic field.

Item Type: Journal Article
Journal or Publication Title: Semiconductor Science and Technology
Uncontrolled Keywords: /dk/atira/pure/researchoutput/libraryofcongress/qc
Departments: Faculty of Science and Technology > Physics
ID Code: 57105
Deposited By: ep_importer_pure
Deposited On: 05 Sep 2012 17:03
Refereed?: Yes
Published?: Published
Last Modified: 30 Sep 2019 16:52
URI: https://eprints.lancs.ac.uk/id/eprint/57105

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