Charge transfer between epitaxial graphene and silicon carbide

Kopylov, Sergey and Tzalenchuk, Alexander and Kubatkin, Sergey and Falko, Vladimir (2010) Charge transfer between epitaxial graphene and silicon carbide. Applied Physics Letters, 97 (11). ISSN 0003-6951

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Abstract

We analyze doping of graphene grown on SiC in two models which differ by the source of charge transferred to graphene, namely, from SiC surface and from bulk donors. For each of the two models, we find the maximum electron density induced in monolayer and bilayer graphene, which is determined by the difference between the work function for electrons in pristine graphene and donor states on/in SiC, and analyze the responsivity of graphene to the density variation by means of electrostatic gates. (c) 2010 American Institute of Physics. [doi:10.1063/1.3487782]

Item Type: Journal Article
Journal or Publication Title: Applied Physics Letters
Uncontrolled Keywords: /dk/atira/pure/researchoutput/libraryofcongress/qc
Subjects:
Departments: Faculty of Science and Technology > Physics
ID Code: 56992
Deposited By: ep_importer_pure
Deposited On: 15 Aug 2012 15:21
Refereed?: Yes
Published?: Published
Last Modified: 11 Feb 2020 08:02
URI: https://eprints.lancs.ac.uk/id/eprint/56992

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