Landau levels in deformed bilayer graphene at low magnetic fields

Mucha Kruczynski, Marcin and Aleiner, Igor L. and Falko, Vladimir (2011) Landau levels in deformed bilayer graphene at low magnetic fields. Solid State Communications, 151 (16). pp. 1088-1093. ISSN 0038-1098

Full text not available from this repository.

Abstract

We review the effect of uniaxial strain on the low-energy electronic dispersion and Landau level structure of bilayer graphene. Based on the tight-binding approach, we derive a strain-induced term in the low-energy Hamiltonian and show how strain affects the low-energy electronic band structure. Depending on the magnitude and direction of applied strain, we identify three regimes of qualitatively different electronic dispersions. We also show that in a weak magnetic field, sufficient strain results in the filling factor v = +/-4 being the most stable in the quantum Hall effect measurement, instead of v = +/-8 in unperturbed bilayer at a weak magnetic field. To mention, in one of the strain regimes, the activation gap at v = +/-4 is, down to very low fields, weakly dependent on the strength of the magnetic field.

Item Type:
Journal Article
Journal or Publication Title:
Solid State Communications
Uncontrolled Keywords:
/dk/atira/pure/researchoutput/libraryofcongress/qc
Subjects:
ID Code:
56986
Deposited By:
Deposited On:
15 Aug 2012 11:47
Refereed?:
Yes
Published?:
Published
Last Modified:
13 May 2020 01:54