Anomalously strong pinning of the filling factor nu=2 in epitaxial graphene

Janssen, T. J. B. M. and Tzalenchuk, A. and Yakimova, R. and Kubatkin, S. and Lara-Avila, S. and Kopylov, S. and Falko, Vladimir (2011) Anomalously strong pinning of the filling factor nu=2 in epitaxial graphene. Physical review B, 83 (23). ISSN 1098-0121

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Abstract

We explore the robust quantization of the Hall resistance in epitaxial graphene grown on Si-terminated SiC. Uniquely to this system, the dominance of quantum over classical capacitance in the charge transfer between the substrate and graphene is such that Landau levels (in particular, the one at exactly zero energy) remain completely filled over an extraordinarily broad range of magnetic fields. One important implication of this pinning of the filling factor is that the system can sustain a very high nondissipative current. This makes epitaxial graphene ideally suited for quantum resistance metrology, and we have achieved a precision of 3 parts in 1010 in the Hall resistance-quantization measurements.

Item Type:
Journal Article
Journal or Publication Title:
Physical review B
Additional Information:
©2011 American Physical Society
Uncontrolled Keywords:
/dk/atira/pure/researchoutput/libraryofcongress/qc
Subjects:
ID Code:
56985
Deposited By:
Deposited On:
15 Aug 2012 11:44
Refereed?:
Yes
Published?:
Published
Last Modified:
14 Jul 2020 03:15