InSb/InAs nanostructures grown by molecular beam epitaxy using Sb-2 and AS(2) fluxes

Solov'ev, V. A. and Carrington, P. and Zhuang, Q. and Lai, K. T. and Haywood, S. K. and Ivanov, S. V. and Krier, A. (2008) InSb/InAs nanostructures grown by molecular beam epitaxy using Sb-2 and AS(2) fluxes. In: NARROW GAP SEMICONDUCTORS 2007. Springer, Guildford, pp. 129-131. ISBN 978-1-4020-8424-9

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Abstract

We report the molecular beam epitaxial growth of InSb sub-monolayers inserted in an InAs matrix using Sb-2 and AS(2) fluxes. The InSb/InAs nanostructures exhibit intense mid-infrared photoluminescence up to room temperature. The nominal thickness of the sub-monolayer insertions can be controlled by the growth temperature (T-Gr = 450-320 degrees C) which gives rise to the variation of the emission wavelength within the 3.6-4.0 mu m range at room temperature. A comparative analysis of the optical properties of the structures grown using (Sb-2,AS(2)) and (Sb-4,AS(4)) is also presented.

Item Type:
Contribution in Book/Report/Proceedings
Uncontrolled Keywords:
/dk/atira/pure/researchoutput/libraryofcongress/qc
Subjects:
ID Code:
56925
Deposited By:
Deposited On:
20 Aug 2012 08:56
Refereed?:
Yes
Published?:
Published
Last Modified:
13 Oct 2020 07:08