Diode lasers for free space optical communications based on InAsSb/InAsSbP grown by LPE

Yin, M. and Krier, A. and Carrington, P. J. and Jones, Robert and Krier, S. E. (2008) Diode lasers for free space optical communications based on InAsSb/InAsSbP grown by LPE. In: NARROW GAP SEMICONDUCTORS 2007. Springer, Guildford, pp. 69-72. ISBN 978-1-4020-8424-9

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Abstract

InAsSb/InAsSbP double heterojunction lasers have been grown by liquid phase epitaxy in which free carrier absorption loss was investigated and minimized by the introduction of two undoped quaternary layers on either side of the active region. The diode lasers operate readily in pulsed mode at elevated temperatures and emit near 3.45 mu m with a threshold current density as low as 118 A/cm(2) at 85 K. Compared to the conventional 3-layer DH laser, reducing the optical loss increases the maximum lasing temperature by 95 K to similar to 210 K in the optimized 5-layer structure.

Item Type:
Contribution in Book/Report/Proceedings
Uncontrolled Keywords:
/dk/atira/pure/researchoutput/libraryofcongress/qc
Subjects:
ID Code:
56908
Deposited By:
Deposited On:
20 Aug 2012 08:42
Refereed?:
Yes
Published?:
Published
Last Modified:
01 Jan 2020 05:34