Low bandgap GaInAsSbP pentanary thermophotovoltaic diodes

Cheetham, K. J. and Carrington, P. J. and Cook, N. B. and Krier, A. (2011) Low bandgap GaInAsSbP pentanary thermophotovoltaic diodes. Solar Energy Materials and Solar Cells, 95 (2). pp. 534-537. ISSN 0927-0248

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Abstract

The liquid phase epitaxial growth of pentanary GaInAsSbP lattice matched onto InAs substrates is reported for use in narrow bandgap thermophotovoltaic cells. The epitaxial layers were characterised and exhibited bright photoluminescence up to room temperature. Prototype thermophotovoltaic cells were fabricated, which were sensitive in the mid-infrared spectral range having cut-off wavelengths in the range 4.0-4.5 mu m at room temperature. (C) 2010 Elsevier B.V. All rights reserved.

Item Type:
Journal Article
Journal or Publication Title:
Solar Energy Materials and Solar Cells
Uncontrolled Keywords:
/dk/atira/pure/researchoutput/libraryofcongress/qc
Subjects:
ID Code:
56906
Deposited By:
Deposited On:
10 Aug 2012 14:16
Refereed?:
Yes
Published?:
Published
Last Modified:
17 Jun 2020 02:04