High quality InAs grown by liquid phase epitaxy using gadolinium gettering

Gao, H H and Krier, A and Sherstnev, V V (1999) High quality InAs grown by liquid phase epitaxy using gadolinium gettering. Semiconductor Science and Technology, 14 (5). pp. 441-445. ISSN 0268-1242

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Abstract

In this paper, we report the growth of very pure InAs epitaxial layers of high quantum efficiency, by introducing the rare-earth element Gd into the liquid phase during LPE growth. We find that the carrier concentration of InAs layers can be effectively reduced to similar to 6 x 10(15) cm(-3). Also, the peak photoluminescence (PL) intensity of such layers can be considerably increased by between ten- and 100-fold compared with untreated material. We attribute this behaviour to the gettering of residual impurities and corresponding reduction of non-radiative recombination centres in the presence of Gd. Four intense sharp lines dominated the low temperature (4 K) photoluminescense spectra of Gd-treated InAs layers. The strongest two of these were found to originate from (a) bound excitons, and (b) donor-acceptor recombination, whereas the remaining two, (c) and (d), were associated with defect-related recombination. The linewidth (FWHM) of the exciton peak (a) was reduced to only 3.8 meV, which is narrower than for undoped epitaxial InAs grown by MBE or MOVPE.

Item Type:
Journal Article
Journal or Publication Title:
Semiconductor Science and Technology
Uncontrolled Keywords:
/dk/atira/pure/researchoutput/libraryofcongress/qc
Subjects:
ID Code:
56607
Deposited By:
Deposited On:
10 Aug 2012 16:03
Refereed?:
Yes
Published?:
Published
Last Modified:
01 Jan 2020 08:02