Purification of epitaxial InAs grown by liquid phase epitaxy using gadolinium gettering

Krier, A and Gao, H H and Sherstnev, V V (1999) Purification of epitaxial InAs grown by liquid phase epitaxy using gadolinium gettering. Journal of Applied Physics, 85 (12). pp. 8419-8422. ISSN 0021-8979

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Abstract

Very pure InAs epitaxial layers of high quantum efficiency have been grown by liquid phase epitaxy using Gd gettering of the growth solution. The residual carrier concentration was reduced to similar to 6 X 10(15) cm(-3) and the peak photoluminescence intensity increased considerably (between 10 and 100 times) using this technique. The low-temperature (4 K) photoluminescence spectra exhibited sharp bound exciton and donor-acceptor lines. The linewidth of the exciton was measured to be only 3.8 meV which is narrower than for undoped epitaxial InAs grown by other techniques. (C) 1999 American Institute of Physics. [S0021-8979(99)00612-X].

Item Type:
Journal Article
Journal or Publication Title:
Journal of Applied Physics
Uncontrolled Keywords:
/dk/atira/pure/researchoutput/libraryofcongress/qc
Subjects:
ID Code:
56606
Deposited By:
Deposited On:
10 Aug 2012 16:00
Refereed?:
Yes
Published?:
Published
Last Modified:
29 Jan 2020 07:32