InAsSbP quantum dots grown by liquid phase epitaxy

Krier, A and Labadi, Z and Hammiche, A (1999) InAsSbP quantum dots grown by liquid phase epitaxy. Journal of Physics D: Applied Physics, 32 (20). pp. 2587-2589. ISSN 0022-3727

Full text not available from this repository.

Abstract

We report the growth of the first InAs-based quantum dots from the liquid phase using a novel rapid slider liquid phase epitaxial growth technique. Photoluminescence was observed at 4 K from these InAsSbP quantum dots encapsulated in GaAs and grown on a highly mismatched GaAs substrate.

Item Type:
Journal Article
Journal or Publication Title:
Journal of Physics D: Applied Physics
Uncontrolled Keywords:
/dk/atira/pure/researchoutput/libraryofcongress/qc
Subjects:
ID Code:
56602
Deposited By:
Deposited On:
09 Aug 2012 11:58
Refereed?:
Yes
Published?:
Published
Last Modified:
05 Aug 2020 01:57