InAsSbP quantum dots grown by liquid phase epitaxy

Krier, A and Labadi, Z and Hammiche, A (1999) InAsSbP quantum dots grown by liquid phase epitaxy. Journal of Physics D: Applied Physics, 32 (20). pp. 2587-2589. ISSN 0022-3727

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Abstract

We report the growth of the first InAs-based quantum dots from the liquid phase using a novel rapid slider liquid phase epitaxial growth technique. Photoluminescence was observed at 4 K from these InAsSbP quantum dots encapsulated in GaAs and grown on a highly mismatched GaAs substrate.

Item Type:

Journal Article

Journal or Publication Title:

Journal of Physics D: Applied Physics

Uncontrolled Keywords:

/dk/atira/pure/core/keywords/physics

Subjects:

?? physicssurfaces, coatings and filmsacoustics and ultrasonicselectronic, optical and magnetic materialscondensed matter physicsqc physics ??

Departments:

Faculty of Science and Technology > Physics
Faculty of Science and Technology > Lancaster Environment Centre

ID Code:

56602

Deposited By:

ep_importer_pure

Deposited On:

09 Aug 2012 11:58

Refereed?:

Yes

Published?:

Published

Last Modified:

15 Jul 2024 13:05

URI:

https://eprints.lancs.ac.uk/id/eprint/56602