Structural modifications of InAs based materials for mid-infrared optoelectronic devices

Nohavica, D and Krier, A (2004) Structural modifications of InAs based materials for mid-infrared optoelectronic devices. In: ASDAM 2004: The Fifth International Conference on Advanced Semiconductor Devices and Microsystems. IEEE, Smolenice, pp. 203-206. ISBN 0-7803-8535-7

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Abstract

Anisotropic and isotropic etchants are very useful in preparation of InAs based devices. Polycarboxylic acids are very interesting as structural and selective etchants and Br-2-based systems have been found to give good results for chemical polishing and etching of A3B5 semiconductors. We investigated both systems with a view towards applications in InAs based optoelectronic devices.

Item Type: Contribution in Book/Report/Proceedings
Uncontrolled Keywords: /dk/atira/pure/researchoutput/libraryofcongress/qc
Subjects:
Departments: Faculty of Science and Technology > Physics
ID Code: 56592
Deposited By: ep_importer_pure
Deposited On: 09 Aug 2012 11:50
Refereed?: Yes
Published?: Published
Last Modified: 30 Sep 2019 11:08
URI: https://eprints.lancs.ac.uk/id/eprint/56592

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