Experimental validation of a large-signal MESFET model for submicron-gate-length devices

DAgostino, S and Paoloni, C (1997) Experimental validation of a large-signal MESFET model for submicron-gate-length devices. Microwave and Optical Technology Letters, 15 (4). pp. 227-229. ISSN 0895-2477

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Abstract

The performance of a physics-based large-signal MESFET model, previously published and experimentally validated for a gate length equal to or greater than 1 mu m, has been evaluated for the submicron case. A satisfactory agreement for both the dc characteristics and the S parameter derived from the model compared with experimental data assures the validity of the model for a 0.5-mu m gate-length MESFET process. (C) 1997 John Wiley & Sons, Inc.

Item Type:
Journal Article
Journal or Publication Title:
Microwave and Optical Technology Letters
Uncontrolled Keywords:
/dk/atira/pure/researchoutput/libraryofcongress/ta
Subjects:
ID Code:
56566
Deposited By:
Deposited On:
08 Aug 2012 18:28
Refereed?:
Yes
Published?:
Published
Last Modified:
01 Jan 2020 08:02