Experimental validation of a large-signal MESFET model for submicron-gate-length devices

DAgostino, S and Paoloni, C (1997) Experimental validation of a large-signal MESFET model for submicron-gate-length devices. Microwave and Optical Technology Letters, 15 (4). pp. 227-229. ISSN 0895-2477

Abstract

The performance of a physics-based large-signal MESFET model, previously published and experimentally validated for a gate length equal to or greater than 1 mu m, has been evaluated for the submicron case. A satisfactory agreement for both the dc characteristics and the S parameter derived from the model compared with experimental data assures the validity of the model for a 0.5-mu m gate-length MESFET process. (C) 1997 John Wiley & Sons, Inc.