DAgostino, S and Paoloni, C (1997) Experimental validation of a large-signal MESFET model for submicron-gate-length devices. Microwave and Optical Technology Letters, 15 (4). pp. 227-229. ISSN 0895-2477
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Official URL: https://doi.org/10.1002/(SICI)1098-2760(199707)15:...
Abstract
The performance of a physics-based large-signal MESFET model, previously published and experimentally validated for a gate length equal to or greater than 1 mu m, has been evaluated for the submicron case. A satisfactory agreement for both the dc characteristics and the S parameter derived from the model compared with experimental data assures the validity of the model for a 0.5-mu m gate-length MESFET process. (C) 1997 John Wiley & Sons, Inc.
| Item Type: | Journal Article |
|---|---|
| Journal or Publication Title: | Microwave and Optical Technology Letters |
| Uncontrolled Keywords: | /dk/atira/pure/researchoutput/libraryofcongress/ta |
| Subjects: | |
| Departments: | Faculty of Science and Technology > Engineering |
| ID Code: | 56566 |
| Deposited By: | ep_importer_pure |
| Deposited On: | 08 Aug 2012 18:28 |
| Refereed?: | Yes |
| Published?: | Published |
| Last Modified: | 30 Sep 2019 16:49 |
| URI: | https://eprints.lancs.ac.uk/id/eprint/56566 |
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